au.\*:("ELSHOCHT, S. V")
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Compatibility of polysilicon with HFO2-BASED gate dielectrics for CMOS applicationsKAUSHIK, V. S; DEGENDT, S; CARTER, R et al.Proceedings - Electrochemical Society. 2003, pp 391-396, issn 0161-6374, isbn 1-56677-376-8, 6 p.Conference Paper
